-
question_answer1)
In the forward bias arrangement of a PN-junction diode [MP PMT 1994, 96, 99]
A)
The N-end is connected to the positive terminal of the battery done
clear
B)
The P-end is connected to the positive terminal of the battery done
clear
C)
The direction of current is from N-end to P-end in the diode done
clear
D)
The P-end is connected to the negative terminal of battery done
clear
View Solution play_arrow
-
question_answer2)
In a PN-junction diode [MP PET 1993]
A)
The current in the reverse biased condition is generally very small done
clear
B)
The current in the reverse biased condition is small but the forward biased current is independent of the bias voltage done
clear
C)
The reverse biased current is strongly dependent on the applied bias voltage done
clear
D)
The forward biased current is very small in comparison to reverse biased current done
clear
View Solution play_arrow
-
question_answer3)
The cut-in voltage for silicon diode is approximately
A)
0.2 V done
clear
B)
0.6 V done
clear
C)
1.1 V done
clear
D)
1.4 V done
clear
View Solution play_arrow
-
question_answer4)
The electrical circuit used to get smooth \[dc\] output from a rectifier circuit is called [KCET 2003]
A)
Oscillator done
clear
B)
Filter done
clear
C)
Amplifier done
clear
D)
Logic gates done
clear
View Solution play_arrow
-
question_answer5)
PN-junction diode works as a insulator, if connected [CPMT 1987]
A)
To A.C. done
clear
B)
In forward bias done
clear
C)
In reverse bias done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer6)
The reverse biasing in a PN junction diode [MP PMT 1991; EAMCET 1994; CBSE PMT 2003]
A)
Decreases the potential barrier done
clear
B)
Increases the potential barrier done
clear
C)
Increases the number of minority charge carriers done
clear
D)
Increases the number of majority charge carriers done
clear
View Solution play_arrow
-
question_answer7)
The electrical resistance of depletion layer is large because
A)
It has no charge carriers done
clear
B)
It has a large number of charge carriers done
clear
C)
It contains electrons as charge carriers done
clear
D)
It has holes as charge carriers done
clear
View Solution play_arrow
-
question_answer8)
In the circuit given below, the value of the current is
A)
0 amp done
clear
B)
\[{{10}^{-2}}\] amp done
clear
C)
\[{{10}^{2}}\]amp done
clear
D)
\[{{10}^{-3}}\]amp done
clear
View Solution play_arrow
-
question_answer9)
What is the current in the circuit shown below [AFMC 2000; RPMT 2001]
A)
0 amp done
clear
B)
\[{{10}^{-2}}\]amp done
clear
C)
1 amp done
clear
D)
0.10 amp done
clear
View Solution play_arrow
-
question_answer10)
If the forward voltage in a semiconductor diode is doubled, the width of the depletion layer will [MP PMT 1996]
A)
Become half done
clear
B)
Become one-fourth done
clear
C)
Remain unchanged done
clear
D)
Become double done
clear
View Solution play_arrow
-
question_answer11)
The PN junction diode is used as [CPMT 1972; AFMC 1997; CBSE PMT 1999; AIIMS 1999; RPMT 2000; MP PMT 04]
A)
An amplifier done
clear
B)
A rectifier done
clear
C)
An oscillator done
clear
D)
A modulator done
clear
View Solution play_arrow
-
question_answer12)
When a PN junction diode is reverse biased
A)
Electrons and holes are attracted towards each other and move towards the depletion region done
clear
B)
Electrons and holes move away from the junction depletion region done
clear
C)
Height of the potential barrier decreases done
clear
D)
No change in the current takes place done
clear
View Solution play_arrow
-
question_answer13)
Two PN-junctions can be connected in series by three different methods as shown in the figure. If the potential difference in the junctions is the same, then the correct connections will be [IIT-JEE 1989]
A)
In the circuit (1) and (2) done
clear
B)
In the circuit (2) and (3) done
clear
C)
In the circuit (1) and (3) done
clear
D)
Only in the circuit (1) done
clear
View Solution play_arrow
-
question_answer14)
A PN- junction has a thickness of the order of [BIT 1990]
A)
\[1\,cm\] done
clear
B)
\[1\,mm\] done
clear
C)
\[{{10}^{-6}}m\] done
clear
D)
\[{{10}^{-12}}cm\] done
clear
View Solution play_arrow
-
question_answer15)
In the depletion region of an unbiased P-N junction diode there are [KCET 1999; CBSE PMT 1999; RPMT 2001; MP PMT 1994, 2003]
A)
Only electrons done
clear
B)
Only holes done
clear
C)
Both electrons and holes done
clear
D)
Only fixed ions done
clear
View Solution play_arrow
-
question_answer16)
On increasing the reverse bias to a large value in a PN-junction diode, current [MP PMT 1994; BHU 2002]
A)
Increases slowly done
clear
B)
Remains fixed done
clear
C)
Suddenly increases done
clear
D)
Decreases slowly done
clear
View Solution play_arrow
-
question_answer17)
In the case of forward biasing of PN-junction, which one of the following figures correctly depicts the direction of flow of carriers [CBSE PMT 1995]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer18)
Which of the following statements concerning the depletion zone of an unbiased PN junction is (are) true [IIT-JEE 1995]
A)
The width of the zone is independent of the densities of the dopants (impurities) done
clear
B)
The width of the zone is dependent on the densities of the dopants done
clear
C)
The electric field in the zone is produced by the ionized dopant atoms done
clear
D)
The electric field in the zone is provided by the electrons in the conduction band and the holes in the valence band done
clear
View Solution play_arrow
-
question_answer19)
A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be [MP PET 1995; CBSE PMT 1998]
A)
A P-type semiconductor done
clear
B)
An N-type semiconductor done
clear
C)
A PN-junction done
clear
D)
An intrinsic semiconductor done
clear
View Solution play_arrow
-
question_answer20)
The approximate ratio of resistances in the forward and reverse bias of the PN-junction diode is [MP PET 2000; MP PMT 1999, 2002, 03; Pb. PMT 2003]
A)
\[{{10}^{2}}:1\] done
clear
B)
\[{{10}^{-2}}:1\] done
clear
C)
\[1:{{10}^{-4}}\] done
clear
D)
\[1:{{10}^{4}}\] done
clear
View Solution play_arrow
-
question_answer21)
In a junction diode, the holes are due to [CBSE PMT 1999; Pb. PMT 2003]
A)
Protons done
clear
B)
Neutrons done
clear
C)
Extra electrons done
clear
D)
Missing of electrons done
clear
View Solution play_arrow
-
question_answer22)
In forward bias, the width of potential barrier in a P-N junction diode [EAMCET (Engg.) 1995; CBSE PMT 1999 RPMT 1997, 2002, 03]
A)
Increases done
clear
B)
Decreases done
clear
C)
Remains constant done
clear
D)
First increases then decreases done
clear
View Solution play_arrow
-
question_answer23)
The cause of the potential barrier in a P-N diode is [CBSE PMT 1998; RPMT 2001]
A)
Depletion of positive charges near the junction done
clear
B)
Concentration of positive charges near the junction done
clear
C)
Depletion of negative charges near the junction done
clear
D)
Concentration of positive and negative charges near the junction done
clear
View Solution play_arrow
-
question_answer24)
In a PN-junction diode not connected to any circuit [IIT-JEE 1998]
A)
The potential is the same everywhere done
clear
B)
The P-type is a higher potential than the N-type side done
clear
C)
There is an electric field at the junction directed from the N- type side to the P- type side done
clear
D)
There is an electric field at the junction directed from the P-type side to the N-type side done
clear
View Solution play_arrow
-
question_answer25)
Which of the following statements is not true [IIT-JEE 1997 Re-Exam]
A)
The resistance of intrinsic semiconductors decrease with increase of temperature done
clear
B)
Doping pure \[Si\]with trivalent impurities give P-type semiconductors done
clear
C)
The majority carriers in N-type semiconductors are holes done
clear
D)
A PN-junction can act as a semiconductor diode done
clear
View Solution play_arrow
-
question_answer26)
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are [IIT-JEE 1997 Cancelled; RPMT 2000; AIIMS 2000]
A)
Drift in forward bias, diffusion in reverse bias done
clear
B)
Diffusion in forward bias, drift in reverse bias done
clear
C)
Diffusion in both forward and reverse bias done
clear
D)
Drift in both forward and reverse bias done
clear
View Solution play_arrow
-
question_answer27)
In P-N junction, avalanche current flows in circuit when biasing is [RPET 1997]
A)
Forward done
clear
B)
Reverse done
clear
C)
Zero done
clear
D)
Excess done
clear
View Solution play_arrow
-
question_answer28)
The depletion layer in the P-N junction region is caused by [CBSE PMT 1994]
A)
Drift of holes done
clear
B)
Diffusion of charge carriers done
clear
C)
Migration of impurity ions done
clear
D)
Drift of electrons done
clear
View Solution play_arrow
-
question_answer29)
Which one is reverse-biased [DCE 1999]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer30)
In a P-N junction diode if P region is heavily doped than n region then the depletion layer is [RPMT 1999]
A)
Greater in P region done
clear
B)
Greater in N region done
clear
C)
Equal in both region done
clear
D)
No depletion layer is formed in this case done
clear
View Solution play_arrow
-
question_answer31)
Which one is in forward bias [RPMT 2000]
A)
B)
C)
D)
None of these done
clear
View Solution play_arrow
-
question_answer32)
The reason of current flow in P-N junction in forward bias is [RPMT 2000]
A)
Drifting of charge carriers done
clear
B)
Minority charge carriers done
clear
C)
Diffusion of charge carriers done
clear
D)
All of these done
clear
View Solution play_arrow
-
question_answer33)
The resistance of a reverse biased P-N junction diode is about [MP PMT 2000]
A)
1 ohm done
clear
B)
\[{{10}^{2}}\]ohm done
clear
C)
\[{{10}^{3}}\]ohm done
clear
D)
\[{{10}^{6}}\]ohm done
clear
View Solution play_arrow
-
question_answer34)
Consider the following statements A and B and identify the correct choice of the given answers A: The width of the depletion layer in a P-N junction diode increases in forwards bias B: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap [EAMCET (Engg.) 2000]
A)
A is true and B is false done
clear
B)
Both A and B are false done
clear
C)
A is false and B is true done
clear
D)
Both A and B are true done
clear
View Solution play_arrow
-
question_answer35)
In comparison to a half wave rectifier, the full wave rectifier gives lower [AFMC 2001]
A)
Efficiency done
clear
B)
Average dc done
clear
C)
Average output voltage done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer36)
Avalanche breakdown is due to [RPMT 2001]
A)
Collision of minority charge carrier done
clear
B)
Increase in depletion layer thickness done
clear
C)
Decrease in depletion layer thickness done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer37)
Which is reverse biased diode [DCE 2001]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer38)
Zener breakdown in a semi-conductor diode occurs when [UPSEAT 2002]
A)
Forward current exceeds certain value done
clear
B)
Reverse bias exceeds certain value done
clear
C)
Forward bias exceeds certain value done
clear
D)
Potential barrier is reduced to zero done
clear
View Solution play_arrow
-
question_answer39)
When forward bias is applied to a P-N junction, then what happens to the potential barrier \[{{V}_{B}}\], and the width of charge depleted region x [UPSEAT 2002, 03; Roorkee 1999; RPET 2003; AIEEE 2004]
A)
\[{{V}_{B}}\] increases, x decreases done
clear
B)
\[{{V}_{B}}\] decreases, x increases done
clear
C)
\[{{V}_{B}}\] increases, x increases done
clear
D)
\[{{V}_{B}}\] decreases, x decreases done
clear
View Solution play_arrow
-
question_answer40)
The potential barrier, in the depletion layer, is due to[EAMCET (Engg.) 1998; Pb. PMT 1999; Pb. PET 2001; AIIMS 2002]
A)
Ions done
clear
B)
Holes done
clear
C)
Electrons done
clear
D)
Both (b) and (c) done
clear
View Solution play_arrow
-
question_answer41)
In the given figure, which of the diodes are forward biased? [Kerala PET 2002] 1.
2.
3.
4.
5.
A)
1, 2, 3 done
clear
B)
2, 4, 5 done
clear
C)
1, 3, 4 done
clear
D)
2, 3, 4 done
clear
View Solution play_arrow
-
question_answer42)
Function of rectifier is [AFMC 2002, 04]
A)
To convert ac into dc done
clear
B)
To convert dc into ac done
clear
C)
Both (a) and (b) done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer43)
When the P end of P-N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P-N junction behaves like [MP PET 2002]
A)
A conductor done
clear
B)
An insulator done
clear
C)
A super-conductor done
clear
D)
A semi-conductor done
clear
View Solution play_arrow
-
question_answer44)
If the two ends P and N of a P-N diode junction are joined by a wire [MP PMT 2002]
A)
There will not be a steady current in the circuit done
clear
B)
There will be a steady current from N side to P side done
clear
C)
There will be a steady current from P side to N side done
clear
D)
There may not be a current depending upon the resistance of the connecting wire done
clear
View Solution play_arrow
-
question_answer45)
A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is \[5.0\times {{10}^{-7}}\]m wide, the intensity of the electric field in this region is [UPSEAT 2002]
A)
\[1.0\times {{10}^{6}}\,V/m\] done
clear
B)
\[1.0\times {{10}^{5}}\,V/m\] done
clear
C)
\[2.0\times {{10}^{5}}\,V/m\] done
clear
D)
\[2.0\times {{10}^{6}}\,V/m\] done
clear
View Solution play_arrow
-
question_answer46)
If no external voltage is applied across P-N junction, there would be [Orissa JEE 2002]
A)
No electric field across the junction done
clear
B)
An electric field pointing from N-type to P-type side across the junction done
clear
C)
An electric field pointing from P-type to N-type side across the junction done
clear
D)
A temporary electric field during formation of P-N junction that would subsequently disappear done
clear
View Solution play_arrow
-
question_answer47)
In a PN-junction [CBSE PMT 2002]
A)
P and N both are at same potential done
clear
B)
High potential at N side and low potential at P side done
clear
C)
High potential at P side and low potential at N side done
clear
D)
Low potential at N side and zero potential at P side done
clear
View Solution play_arrow
-
question_answer48)
For the given circuit of PN-junction diode, which of the following statement is correct [CBSE PMT 2002]
A)
In forward biasing the voltage across R is V done
clear
B)
In forward biasing the voltage across R is 2V done
clear
C)
In reverse biasing the voltage across R is V done
clear
D)
In reverse biasing the voltage across R is 2V done
clear
View Solution play_arrow
-
question_answer49)
On adjusting the P-N junction diode in forward biased [RPET 2003]
A)
Depletion layer increases done
clear
B)
Resistance increases done
clear
C)
Both decreases done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer50)
In the middle of the depletion layer of a reverse-biased PN junction, the [AIEEE 2003]
A)
Potential is zero done
clear
B)
Electric field is zero done
clear
C)
Potential is maximum done
clear
D)
Electric field is maximum done
clear
View Solution play_arrow
-
question_answer51)
Barrier potential of a P-N junction diode does not depend on [CBSE PMT 2003]
A)
Temperature done
clear
B)
Forward bias done
clear
C)
Doping density done
clear
D)
Diode design done
clear
View Solution play_arrow
-
question_answer52)
A crystal diode is a [MP PET 2004]
A)
Non-linear device done
clear
B)
Amplifying device done
clear
C)
Linear device done
clear
D)
Fluctuating device done
clear
View Solution play_arrow
-
question_answer53)
Of the diodes shown in the following diagrams, which one is reverse biased [CBSE PMT 2004]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer54)
In a PN junction photo cell, the value of photo-electromotive force produced by monochromatic light is proportional to [CBSE PMT 2004]
A)
The voltage applied at the PN junction done
clear
B)
The barrier voltage at the PN junction done
clear
C)
The intensity of the light falling on the cell done
clear
D)
The frequency of the light falling on the cell done
clear
View Solution play_arrow
-
question_answer55)
Which is the correct diagram of a half-wave rectifier [Orissa PMT 2004]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer56)
The maximum efficiency of full wave rectifier is [J & K CET 2004]
A)
100% done
clear
B)
25.20% done
clear
C)
40.2% done
clear
D)
81.2% done
clear
View Solution play_arrow
-
question_answer57)
Serious draw back of the semiconductor device is [Pb. PMT 2004]
A)
They cannot be used with high voltage done
clear
B)
They pollute the environment done
clear
C)
They are costly done
clear
D)
They do not last for long time done
clear
View Solution play_arrow
-
question_answer58)
Select the correct statement [RPMT 2003]
A)
In a full wave rectifier, two diodes work alternately done
clear
B)
In a full wave rectifier, two diodes work simultaneously done
clear
C)
The efficiency of full wave and half wave rectifiers is same done
clear
D)
The full wave rectifier is bi-directional. done
clear
View Solution play_arrow
-
question_answer59)
In order to forward bias a PN junction, the negative terminal of battery is connected to [RPMT 2003]
A)
P?side done
clear
B)
Either P?side or N?side done
clear
C)
N?side done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer60)
The diode shown in the circuit is a silicon diode. The potential difference between the points A and B will be [RPMT 2002]
A)
6 V done
clear
B)
0.6 V done
clear
C)
0.7 V done
clear
D)
0 V done
clear
View Solution play_arrow
-
question_answer61)
Zener breakdown takes place if [RPMT 2000]
A)
Doped impurity is low done
clear
B)
Doped impurity is high done
clear
C)
Less impurity in N-part done
clear
D)
Less impurity in P-type done
clear
View Solution play_arrow
-
question_answer62)
Consider the following statements A and B and identify the correct choice of the given answers A zener diode is always connected in reverse bias The potential barrier of a PN junction lies between 0.1 to 0.3 V approximately [EAMCET 2000]
A)
A and B are correct done
clear
B)
A and B are wrong done
clear
C)
A is correct but B is wrong done
clear
D)
A is wrong but B is correct done
clear
View Solution play_arrow
-
question_answer63)
The correct symbol for zener diode is [RPMT 2000]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer64)
Which one of the following statements is not correct [SCRA 2000]
A)
A diode does not obey Ohm's law done
clear
B)
A PN junction diode symbol shows an arrow identifying the direction of current (forward) flow done
clear
C)
An ideal diode is an open switch done
clear
D)
An ideal diode is an ideal one way conductor done
clear
View Solution play_arrow
-
question_answer65)
Which of the following semi-conductor diodes is reverse biased [DPMT 2000]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer66)
No bias is applied to a P-N junction, then the current [RPMT 1999]
A)
Is zero because the number of charge carriers flowing on both sides is same done
clear
B)
Is zero because the charge carriers do not move done
clear
C)
Is non-zero done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer67)
Zener diode is used as [CBSE PMT 1999]
A)
Half wave rectifier done
clear
B)
Full wave rectifier done
clear
C)
ac voltage stabilizer done
clear
D)
dc voltage stabilizer done
clear
View Solution play_arrow
-
question_answer68)
The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted in to a N-type semiconductor the distance of Fermi level from conduction band is [EAMCET (Med.) 1999]
A)
Greater than 0.55 eV done
clear
B)
Equal to 0.55 eV done
clear
C)
Lesser than 0.55 eV done
clear
D)
Equal to 1.1 eV done
clear
View Solution play_arrow
-
question_answer69)
A semiconductor X is made by doping a germanium crystal with arsenic (Z = 33). A second semiconductor Y is made by doping germanium with indium (Z = 49). The two are joined end to end and connected to a battery as shown. Which of the following statements is correct [Orissa JEE 1998]
A)
X is P-type, Y is N-type and the junction is forward biased done
clear
B)
X is N-type, Y is P-type and the junction is forward biased done
clear
C)
X is P-type, Y is N-type and the junction is reverse biased done
clear
D)
X is N-type, Y is P-type and the junction is reverse biased done
clear
View Solution play_arrow
-
question_answer70)
In P-N junction, the barrier potential offers resistance to [AMU 1995, 96]
A)
Free electrons in N region and holes in P region done
clear
B)
Free electrons in P region and holes in N region done
clear
C)
Only free electrons in N region done
clear
D)
Only holes in P region done
clear
View Solution play_arrow
-
question_answer71)
Symbolic representation of photodiode is [RPMT 1995]
A)
B)
C)
D)
View Solution play_arrow
-
question_answer72)
To make a PN junction conducting [IIT-JEE 1994]
A)
The value of forward bias should be more than the barrier potential done
clear
B)
The value of forward bias should be less than the barrier potential done
clear
C)
The value of reverse bias should be more than the barrier potential done
clear
D)
The value of reverse bias should be less than the barrier potential done
clear
View Solution play_arrow
-
question_answer73)
Which is the wrong statement in following sentences? A device in which P and N-type semiconductors are used is more useful than a vacuum type because [MP PET 1992]
A)
Power is not necessary to heat the filament done
clear
B)
It is more stable done
clear
C)
Very less heat is produced in it done
clear
D)
Its efficiency is high due to a high voltage across the junction done
clear
View Solution play_arrow
-
question_answer74)
The depletion layer in silicon diode is 1 mm wide and the knee potential is 0.6 V, then the electric field in the depletion layer will be
A)
Zero done
clear
B)
0.6 Vm?1 done
clear
C)
6 ´ 104 V/m done
clear
D)
6 ´ 105 V/m done
clear
View Solution play_arrow
-
question_answer75)
In the diagram, the input is across the terminals A and C and the output is across the terminals B and D, then the output is [CBSE PMT 1994]
A)
Zero done
clear
B)
Same as input done
clear
C)
Full wave rectifier done
clear
D)
Half wave rectifier done
clear
View Solution play_arrow
-
question_answer76)
The current through an ideal PN-junction shown in the following circuit diagram will be [AMU 1998]
A)
Zero done
clear
B)
1 mA done
clear
C)
10 mA done
clear
D)
30 mA done
clear
View Solution play_arrow
-
question_answer77)
If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be [UPSEAT 2000; CBSE PMT 2003; AIEEE 2005]
A)
50 Hz done
clear
B)
70.7 Hz done
clear
C)
100 Hz done
clear
D)
25 Hz done
clear
View Solution play_arrow
-
question_answer78)
In a full wave rectifiers, input ac current has a frequency ?n?. The output frequency of current is [BHU 2005]
A)
n/2 done
clear
B)
n done
clear
C)
2n done
clear
D)
None of these done
clear
View Solution play_arrow
-
question_answer79)
A diode having potential difference 0.5 V across its junction which does not depend on current, is connected in series with resistance of 20 W across source. If 0.1 A passes through resistance then what is the voltage of the source [DCE 2005]
A)
1.5 V done
clear
B)
2.0 V done
clear
C)
2.5 V done
clear
D)
5 V done
clear
View Solution play_arrow