question_answer1) In a p-n junction
A) the potential of p & n sides becomes higher alternately done clear
B) the p side is at higher electrical potential than n side done clear
C) the n side is at higher electric potential than p side done clear
D) both p & n sides are at same potential done clear
View Solution play_arrowquestion_answer2) Barrier potential of a p-n junction diode does not depend on
A) doping density done clear
B) diode design done clear
C) temperature done clear
D) forward bias done clear
View Solution play_arrowquestion_answer3) The energy band gap is maximum in
A) metals done clear
B) super conductors done clear
C) insulators done clear
D) semiconductors done clear
View Solution play_arrowA) emmiter done clear
B) base done clear
C) collector done clear
D) can be any of the above three done clear
View Solution play_arrowquestion_answer5) When n-p-n transistor is used as an amplifier
A) electrons move from collector to base done clear
B) holes move from emitter to base done clear
C) electrons move from base to collector done clear
D) holes move from base to emitter done clear
View Solution play_arrowA) 0 done clear
B) \[\pi /4\] done clear
C) \[\pi /2\] done clear
D) \[\pi \] done clear
View Solution play_arrowquestion_answer7) Inverter converts
A) alternating current into direct current done clear
B) direct current into alternating current done clear
C) current at low voltage to current at high voltage done clear
D) None of these done clear
View Solution play_arrowquestion_answer8) The Donor level in a semiconductor is placed
A) half-way in the forbidden energy gap done clear
B) in the forbidden energy gap close to the upper edge of the valence band done clear
C) in the conduction band close to the lower edge to the conduction band done clear
D) in the forbidden energy gap close to the lower edge of the conduction band done clear
View Solution play_arrowA) semiconductor done clear
B) conductor done clear
C) metal done clear
D) insulator done clear
View Solution play_arrowA) \[{{({{E}_{g}})}_{Si}}<{{({{E}_{g}})}_{Ge}}<{{({{E}_{g}})}_{C}}\] done clear
B) \[{{({{E}_{g}})}_{C}}<{{({{E}_{g}})}_{Ge}}<{{({{E}_{g}})}_{Si}}\] done clear
C) \[{{({{E}_{g}})}_{C}}>{{({{E}_{g}})}_{Si}}>{{({{E}_{g}})}_{Ge}}\] done clear
D) \[{{({{E}_{g}})}_{C}}={{({{E}_{g}})}_{Si}}={{({{E}_{g}})}_{Ge}}\] done clear
View Solution play_arrowquestion_answer11) In an unbiased p-n junction, holes diffuse from the p-region to n-region because
A) free electrons in the n-region attract them. done clear
B) they move across the junction by the potential difference. done clear
C) hole concentration in p-region is more as compared to p-region. done clear
D) all the above done clear
View Solution play_arrowquestion_answer12) For a transistor amplifier, the voltage gain
A) remains constant for all frequencies. done clear
B) is high at high and low frequencies and constant in the middle frequency range. done clear
C) is low at high and low frequencies and constant at mid frequencies. done clear
D) none of the above done clear
View Solution play_arrowquestion_answer13) p-n junction diode works as a insulator, if connected
A) to A.C. done clear
B) in forward bias done clear
C) in reverse bias done clear
D) None of these done clear
View Solution play_arrowquestion_answer14) In an n-type silicon, which of the following statement is true?
A) Electrons are majority carriers and trivalent atoms are the dopants. done clear
B) Electrons are minority carriers and pentavalent atoms are the dopants. done clear
C) Holes are minority carriers and pentavalent atoms are the dopants. done clear
D) Holes are majority carriers and trivalent atoms are the dopants. done clear
View Solution play_arrowquestion_answer15) Which of the statements is true for p-type semiconductors??
A) Electrons are majority carriers and trivalent atoms are the dopants. done clear
B) Electrons are minority carriers and pentavalent atoms are the dopants. done clear
C) Holes are minority carriers and pentavalent atoms are the dopants. done clear
D) Holes are majority carriers and trivalent atoms are the dopants. done clear
View Solution play_arrowquestion_answer16) When a forward bias is applied to a p-n junction, it
A) raises the potential barrier. done clear
B) reduces the majority carrier current to zero. done clear
C) lowers the potential barrier. done clear
D) None of these done clear
View Solution play_arrowquestion_answer17) The potential barrier, in the depletion layer, is due to
A) ions done clear
B) holes done clear
C) electrons done clear
D) both [b] and [c] done clear
View Solution play_arrowquestion_answer18) Zener diode is used as
A) half wave rectifier done clear
B) full wave rectifier done clear
C) A.C. voltage stabilizer done clear
D) D.C. voltage stabilizer done clear
View Solution play_arrowquestion_answer19) For a transistor amplifier, the voltage gain
A) remains constant for all frequencies done clear
B) is high at high and low frequencies and constant in the middle frequency range done clear
C) is low at high and low frequencies and constant at mid frequencies done clear
D) None of these done clear
View Solution play_arrowA) p-type done clear
B) n-type done clear
C) intrinsic done clear
D) Cannot say done clear
View Solution play_arrowquestion_answer21) When a semiconductor is heated, its resistance
A) decreases done clear
B) increases done clear
C) remains unchanged done clear
D) either [b] or [c] done clear
View Solution play_arrowquestion_answer22) The forbidden gap in the energy bands of germanium at room temperature is about
A) 1.1 eV done clear
B) 0.1 eV done clear
C) 0.67 eV done clear
D) 6.7 eV done clear
View Solution play_arrowquestion_answer23) To obtain a p-type germanium semiconductor, it must be doped with
A) arsenic done clear
B) antimony done clear
C) indium done clear
D) phosphorus done clear
View Solution play_arrowquestion_answer24) Which impurity is doped in Si to form n-type semiconductors?
A) Al done clear
B) B done clear
C) As done clear
D) None of these done clear
View Solution play_arrowquestion_answer25) In extrinsic semiconductors
A) the conduction band and valence band overlap done clear
B) the gap between conduction band and valence band is more than 16eV done clear
C) the gap between conduction band and valence band is near about 1 eV done clear
D) the gap between conduction band and valence band will be 100 eV and more done clear
View Solution play_arrowquestion_answer26) Function of rectifier is
A) to convert A. C. into D.C. done clear
B) to convert D.C. into A.C. done clear
C) Both [a] and [b] done clear
D) None of these done clear
View Solution play_arrowquestion_answer27) Zener breakdown takes place if
A) doped impurity is low done clear
B) doped impurity is high done clear
C) less impurity in n-part done clear
D) less impurity in p-part done clear
View Solution play_arrowquestion_answer28) Which one of the following is not a correct statement about semiconductors?
A) The electrons and holes have different mobilities in a semiconductor done clear
B) In an n-type semiconductor, the Fermi level lies closer to the conduction band edge done clear
C) Silicon is a direct band gap semiconductor done clear
D) Silicon is has diamond structure done clear
View Solution play_arrowquestion_answer29) The energy band gap is minimum in
A) metals done clear
B) superconductors done clear
C) insulators done clear
D) semiconductors. done clear
View Solution play_arrowquestion_answer30) An oscillator is nothing but an amplifer with
A) positive feedback done clear
B) negative feedback done clear
C) large gain done clear
D) no feedback done clear
View Solution play_arrowA) an insulator done clear
B) a conductor done clear
C) p-type semiconductor done clear
D) n-type semiconductor done clear
View Solution play_arrowquestion_answer32) Regarding a semiconductor which one of the following is wrong?
A) There are no free electrons at room temperature done clear
B) There are no free electrons at OK done clear
C) The number of free electrons increases with rise of temperature done clear
D) The charge carriers are electrons and holes done clear
View Solution play_arrowquestion_answer33) p-n junction is said to be forward biased, when
A) the positive pole of the battery is joined to the p-semiconductor and negative pole to the n-semiconductor done clear
B) the positive pole of the battery is joined to the n-semiconductor and p-semiconductor done clear
C) the positive pole of the battery is connected to n- semiconductor and/?- semiconductor done clear
D) a mechanical force is applied in the forward direction done clear
View Solution play_arrowquestion_answer34) At absolute zero, Si acts as
A) non-metal done clear
B) metal done clear
C) insulator done clear
D) None of these done clear
View Solution play_arrowquestion_answer35) When n-type semiconductor is heated
A) number of electrons increases while that of holes decreases done clear
B) number of holes increases while that of electrons decreases done clear
C) number of electrons and holes remain same done clear
D) number of electrons and holes increases equally done clear
View Solution play_arrowquestion_answer36) To use a transistor as an amplifier
A) The emitter base junction is forward biased and the base collector junction is reverse biased done clear
B) no bias voltage is required done clear
C) both junctions are forward biased done clear
D) both junctions are reverse biased done clear
View Solution play_arrowA) emitter done clear
B) base done clear
C) collector done clear
D) any of the above depending upon the nature of transistor done clear
View Solution play_arrowA) diffusion of charges done clear
B) drift of charges done clear
C) depends on the nature of material done clear
D) both drift and diffusion of charges done clear
View Solution play_arrowquestion_answer39) When an n-p-n transistor is used as an amplifier then
A) electrons flow from emitter to collector done clear
B) holes flow from emitter to collector done clear
C) electrons flow from collector to emitter done clear
D) electrons flow from battery to emitter done clear
View Solution play_arrowquestion_answer40) An n-p-n transistor conducts when
A) both collector and emitter are negative with respect to the base done clear
B) both collector and emitter are positive with respect to the base done clear
C) collector is positive and emitter is negative with respect to the base done clear
D) collector is positive and emitter is at same potential as the base done clear
View Solution play_arrowquestion_answer41) Reverse bias applied to a junction diode
A) increases the minority carrier current done clear
B) lowers the potential barrier done clear
C) raises the potential barrier done clear
D) increases the majority carrier current done clear
View Solution play_arrowquestion_answer42) In semiconductors, at room temperature
A) the conduction band is completely empty done clear
B) the valence band is partially empty and the conduction band is partially filled done clear
C) the valence band is completely filled and the conduction band is partially filled done clear
D) the valence band is completely filled done clear
View Solution play_arrowquestion_answer43) Application of a forward bias to a p-n junction
A) widens the depletion zone. done clear
B) increases the potential difference across the depletion zone. done clear
C) increases the number of donors on the n side. done clear
D) increases the electric field in the depletion zone. done clear
View Solution play_arrowA) each of them increases done clear
B) each of them decreases done clear
C) copper increases and germanium decreases done clear
D) copper decreases and germanium increases done clear
View Solution play_arrowquestion_answer45) In an intrinsic semiconductor
A) only electrons are responsible for flow of current done clear
B) both holes and electrons carry current done clear
C) both holes and electrons carry current with electrons being majority carriers done clear
D) only holes are responsible for flow of current done clear
View Solution play_arrowA) intrinsic done clear
B) extrinsic done clear
C) donor done clear
D) acceptor done clear
View Solution play_arrowA) are lighter done clear
B) are negatively charged done clear
C) require smaller energy for moving through crystal lattice done clear
D) undergo smaller number of collisions done clear
View Solution play_arrowquestion_answer48) In the symbol of a transistor , the arrow head points in the direction of flow of
A) holes done clear
B) electrons done clear
C) majority carriers done clear
D) minority carriers done clear
View Solution play_arrowquestion_answer49) Transistors are essentially
A) power driven devices done clear
B) current driven devices done clear
C) voltage driven devices done clear
D) resistance driven devices done clear
View Solution play_arrowquestion_answer50) In a transistor
A) emitter is more highly doped than collector done clear
B) collector is more highly doped than emitter done clear
C) both are equally doped done clear
D) None of the above done clear
View Solution play_arrowA) the emitter junction is reverse biased in n-p-n. done clear
B) the emitter junction injects minority carriers into base region of the p-n-p done clear
C) the emitter injects holes into the base of the p-n-p and electrons into the base region n-p-n done clear
D) the emitter injects holes into the base of n-p-n done clear
View Solution play_arrowquestion_answer52) n-p-n transistors are preferred to p-n-p transistors because:
A) they have low cost done clear
B) they have low dissipation energy done clear
C) they are capable of handling large power done clear
D) electrons have high mobility than holes and hence high mobility of energy done clear
View Solution play_arrowquestion_answer53) An alternating current can be converted into direct current by a
A) rectifier done clear
B) transformer done clear
C) dynamo done clear
D) motor done clear
View Solution play_arrow
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