Banking Physics Semiconducting Devices Question Bank Semiconductor Electronics

  • question_answer
    Application of a forward bias to a p-n junction

    A)  widens the depletion zone.

    B)  increases the potential difference across the depletion zone.

    C)  increases the number of donors on the n side.  

    D)  increases the electric field in the depletion zone.

    Correct Answer: C

    Solution :

       Number of donors is more because electrons from - ve terminal of the cell pushes (enters) the n-side and decreases the number of uncompensated pentavalent ion due to which potential barrier is reduced. The neutralised pentavalent atom are again in position to donate electrons.


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