question_answer

The concentration of hole - electron pairs in pure silicon at \[T=300K\]is \[7\times {{10}^{15}}\] per cubic meter. Antimony is doped into silicon in a proportion of 1 atom in \[{{10}^{7}}\text{ }Si\] atoms. Assuming that half of the impurity atoms contribute electron in the conduction band, calculate the factor by which the number of charge carriers increases due to doping the number of silicon atoms per cubic meter is \[5\times {{10}^{28}}\].

Answer:

\[1.8\times {{10}^{5}}\]