NEET AIPMT SOLVED PAPER 1999

  • question_answer
                    In forward bias the width of depletion layer in a p-n junction diode:                                       

    A)                 increases

    B)                 decreases

    C)                 remains constant                                            

    D)                 first increases then decreases

    Correct Answer: B

    Solution :

                    Since in forward biasing, negative of the battery is connected to n-type side, energy of the electrons in n-type region increases by an amount eV where V is the voltage (forward) applied by the battery. Due to this increase in energy on n-type side, more electrons cross the junction easily and potential barrier is reduced to \[e({{V}_{B}}-V)\]. Thus, depletion layer of p-n junction diode decreases.


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