A) The drift current in a p-n junction is from the n-side to the p-side.
B) Drift current is due to free electrons only.
C) Silicon is preferred over germanium for making semiconductor devices.
D) The energy gap in germanium is more than the energy gap in silicon.
Correct Answer: D
Solution :
[d] Silicon is cheaper than germanium, so it is preferred over germanium. But energy gap in germanium is smaller than silicon.
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