JEE Main & Advanced Physics Semiconducting Devices Question Bank Self Evaluation Test - Semiconductor Electronics: Materials, Devices and Simple Circuits

  • question_answer
    The I-V characteristic of a P-N junction diode is shown below. The approximate dynamic resistance of the p-n junction when a forward bias of 2 volt is applied is     

    A)  \[1\,\Omega \]

    B)  \[0.25\,\Omega \]

    C)  \[0.5\,\Omega \]

    D)  \[5\,\Omega \]

    Correct Answer: B

    Solution :

    [b] \[R=\frac{\Delta V}{\Delta I}=\frac{2.1-2}{(800-400)\times {{10}^{-3}}}=\frac{1}{4}=0.25\Omega \]


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