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Consider the following statements A and B and identify the correct choice of the given answers A: The width of the depletion layer in a P-N junction diode increases in forwards bias B:       In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap [EAMCET (Engg.) 2000]

A)            A is true and B is false      

B)            Both A and B are false

C)            A is false and B is true      

D)            Both A and B are true

Correct Answer: C

Solution :

                   In forward biasing of PN junction diode width of depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap