A) when a Ge crystal is doped with an impurity containing 3 valence electrons
B) when a Ge crystal is doped with an impurity containing 5 valence electrons
C) from pure Ge crystal
D) from pure Si crystal
Correct Answer: B
Solution :
An n-type semiconductor is obtained by carrying out a process of doping, that is by adding an impurity of valence five electrons to a valence of four semiconductor (germanium) in order to increase the number of free negative charge carriers, while p-type semiconductor is obtained when germanium crystal is doped with an impurity containing three valence.
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