MGIMS WARDHA MGIMS WARDHA Solved Paper-2010

  • question_answer
    Avalanche breakdown in a p-n junction diode is due to

    A)  shift of Fermi level

    B)  widening of forbidden gap

    C)  high impurity concentration

    D)  cumulative effect of conduction band electrons collision

    Correct Answer: D

    Solution :

                     At a particular value of reverse bias voltage, the covalent bonds near the junction break, so electron-hole pairs get liberated, this process rapidly multiplies and an avalanche of electron-hole pairs is produced, so choice  is correct.


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