A) increases the majority carrier current
B) increases the minority carrier current
C) lowers the potential barrier
D) raises the potential barrier
Correct Answer: D
Solution :
In reverse biasing of a \[p-n\] junction, p-side is connected to the negative terminal of the battery and n-side is connected to positive terminal of battery. In this situation battery increases the restraining force and current through the junction is exceedingly small. The |
cause of this small, current is the conduction by the minority electrons and holes obtained due to light and thermal agitation. Such circuit lowers the fermi level on n-side by an amount eV raising the barrier height to \[e({{V}_{B}}+V)\] and increasing the depletion width too. |
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