NEET Physics Semiconducting Devices NEET PYQ-Semiconducting Devices

  • question_answer
      Application of a forward bias to a \[p-n\]  junction:                                                  [AIPMT (S) 2005]

    A)        increases the number of donors on the n-side

    B)       increases the electric field in the depletion zone

    C)       increases the potential difference across the depletion zone

    D)       widens the depletion zone

    Correct Answer: A

    Solution :

    When p-side of junction diode is connected to positive of battery and n-side to the negative, then junction diode is forward biased.
               
                In this condition, more number of electrons enter in n-side from battery thereby increasing the number of donor on n-side.
                Note:    The curves for charge density, electric field and potential barrier for a \[p-n\] junction are as shown in figure below:
                  Untitled-1


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