A) Pure Si doped with trivalent impurities gives a p-type semiconductor
B) Majority carriers in a n-type semiconductor are holes
C) Minority carriers in a p-type semiconductor are electrons
D) The resistance of intrinsic semiconductor decreases with increase of temperature
Correct Answer: B
Solution :
| p-type semiconductor are obtained by adding a small amount of trivalent impurity to a pure sample of semiconductor (Ge). |
| Majority charge carriers holes Minority charge carriers electrons n-type semiconductor are obtained by adding a small amount of pentavalent impurity to a pure sample of semiconductor (Ge). |
| Majority charge carriers electrons. The resistance of intrinsic semiconductors decreases with increase of temperature. |
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