question_answer

A potential difference of \[2V\] is applied between the opposite faces of a Ge crystal plate of area \[1c{{m}^{2}}\] and thickness 0.5 mm. If the concentration of electrons in Ge is \[2\times {{10}^{19}}/{{m}^{2}}\] and mobilitys of electrons and holes are \[\text{0}\text{.36 }{{\text{m}}^{\text{2}}}{{\text{V}}^{\text{-1}}}{{\text{s}}^{\text{-1}}}\]and \[\text{0}\text{.14 }{{\text{m}}^{\text{2}}}{{\text{V}}^{\text{-1}}}{{\text{s}}^{\text{-1}}}\]respectively, then the current flowing through the plate will be

A)  0.25 A

B)  0.45 A

C)  0.56 A

D)  0.64 A