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(1) Gases or their mixtures are homogeneous in composition. (2) Gases have very low density due to negligible intermolecular forces. (3) Gases have infinite expansibility and high compressibility. (4) Gases exert pressure. (5) Gases possess high diffusibility. (6) Gases do not have definite shape and volume like liquids. (7) Gaseous molecules move very rapidly in all directions in a random manner i.e., gases have highest kinetic energy. (8) Gaseous molecules collide with one another and also with the walls of container with perfectly elastic collisions. (9) Gases can be liquified, if subjected to low temperatures (below critical) or high pressures. (10) Thermal energy of gases >> molecular attraction. (11) Gases undergo similar change with the change of temperature and pressure. In other words, gases obey certain laws known as gas laws.

         Some of the properties of solids which are useful in electronic and magnetic devices such as, transistor, computers, and telephones etc., are summarised below,            (1) Electrical properties : Solids are classified into following classes depending on the extent of conducting nature.            (i) Conductors : The solids which allow the electric current to pass through them are called conductors. These are further of two types; Metallic conductors and electrolytic conductors. The electrical conductivity of these solids is high in the range \[{{10}^{4}}-{{10}^{6}}oh{{m}^{-1}}c{{m}^{-1}}\]. Their  conductance decrease with increase in temperature.            (ii) Insulators : The solids which do not allow the current to pass through them are called insulators. e.g., rubber, wood and plastic etc. the electrical conductivity of these solids is very low i.e., \[{{10}^{-12}}-{{10}^{-22}}oh{{m}^{-1}}c{{m}^{-1}}\].            (iii) Semiconductors : The solids whose electrical conductivity lies between those of conductors and insulators are called semiconductors. The conductivity of these solid is due to the presence of impurities. e.g. Silicon and Germanium. Their conductance increase with increase in temperature. The electrical conductivity of these solids is increased by adding impurity. This is called Doping. When silicon is doped with P (or As, group 5th  elements), we get n-type semiconductor. This is because P has five valence electrons. It forms 4 covalent bonds with silicon and the fifth electron remains free and is loosely bound. This give rise to n-type semiconductor because current is carried by electrons when silicon is doped with Ga (or in In/Al, group 3rd  elements) we get p-type semiconductors.            Superconductivity : When any material loses its resistance for electric current, then it is called superconductor, Kammerlingh Onnes (1913) observed this phenomenon at 4K in mercury. The materials offering no resistance to the flow of current at very low temperature (2-5K) are called superconducting materials and phenomenon is called superconductivity.            Examples, \[N{{b}_{3}}\]Ge alloy (Before 1986)                             \[L{{a}_{1.25}}B{{a}_{0.15}}Cu{{O}_{4}}\] (1986)                            \[YB{{a}_{2}}\]\[C{{u}_{3}}{{O}_{7}}\] (1987)          Following are the important applications of superconductivity,            (a) Electronics,                           (b) Building supermagnets,            (c) Aviation transportation,       (d) Power transmission            ?The temperature at which a material enters the superconducting state is called the superconducting transition temperature, \[({{T}_{c}})\]?. Superconductivity was also observed in lead (Pb) at 7.2 K and in tin (Sn) at 3.7K. The phenomenon of superconductivity in other materials such as polymers and organic crystals.  Examples are            (SN)x, polythiazyl, the subscript x indicates a large number of variable size.            (TMTSF)2PF6, where TMTSF is tetra methyl tetra selena fulvalene.            (2) Magnetic properties : Based on the behavior of substances when placed in the magnetic field, there are classified into five classes. Magnetic properties of solids
Properties Description Alignment of Magnetic Dipoles              (2) Radius ratio : Ionic compounds occur in crystalline forms. Ionic compounds are made of cations and anions. These ions are arranged in three dimensional array to form an aggregate of the type (A+B?)n . Since, the Coulombic forces are non-directional, hence the structures of such crystals are mainly governed by the ratio of the radius of cation \[({{r}_{+}})\] to that of anion \[({{r}_{-}}).\] The ratio \[{{r}_{+}}\] to \[{{r}_{-}}\] \[({{r}_{+}}/{{r}_{-}})\] is called as radius ratio.  \[\text{Radius}\ \text{ ratio }=\text{ }\frac{{{r}_{+}}}{{{r}_{-}}}\]                       Limiting Radius ratios and Structure more...
Even in the close packing of spheres, there is left some empty space between the spheres. This empty space in the crystal lattice is called site or void or hole. Voids are of following types, (1) Trigonal void :  This site is formed when three spheres lie at the vertices of an equilateral triangle. Size of the trigonal site is given by the following relation, \[r=0.155R\] r  = Radius of the spherical trigonal void R = Radius of closely packed spheres            (2) Tetrahedral void : A tetrahedral void is developed when triangular voids (made by three spheres in one layer touching each other) have contact with one sphere either in the upper layer or in the lower layer.         Tetrahedral void   The number of tetrahedral voids is double the number of spheres in the crystal structure. \[\frac{r}{R}=0.225\] where, r is the radius of the tetrahedral void or atom occupying tetrahedral void. R is the radius of spheres forming tetrahedral void.   (3) Octahedral void : This type of void is surrounded by six closely packed spheres, i.e. it is formed by six spheres.  The number of octahedral voids is equal to the number of spheres.  \[\frac{r}{R}=\,0.414\] (4) Cubic void : This type of void is formed between 8 closely packed spheres which occupy all the eight corner of cube.                    \[\frac{r}{R}=0.732\] The decreasing order of the size of the various voids is, Cubic > Octahedral > Tetrahedral > Trigonal        

In the formation of crystals, the constituent particles (atoms, ions or molecules) get closely packed together. The closely packed arrangement is that in which maximum available space is occupied. This corresponds to a state of maximum density. The closer the packing, the greater is the stability of the packed system.            (1) Close packing in two dimensions : The two possible arrangement of close packing in two dimensions.            (i) Square close packing : In which the spheres in the adjacent row lie just one over the other and show a horizontal as well as vertical alignment and form square. In this arrangement each sphere is in contact with four spheres.                           (ii) Hexagonal close packing : In which the spheres in every second row are seated in the depression between the spheres of first row. The spheres in the third row are vertically aligned with spheres in first row. The similar pattern is noticed throughout the crystal structure. In this arrangement each sphere is in contact with six other spheres.                            (2) Close packing in three dimensions : In order to develop three dimensional close packing, let us retain the hexagonal close packing in the first layer. For close packing, each spheres in the second layer rests in the hollow at the centre of three touching spheres in the layer as shown in figure. The spheres in the first layer are shown by solid lines while those in second layer are shown by broken lines. It may be noted that only half of the triangular voids in the first layer are occupied by spheres in the second layer (i.e., either b or c). The unoccupied hollows or voids in the first layer are indicated by (c) in figure. There are two alternative ways in which species in third layer can be arranged over the second layer,          (i) Hexagonal close packing : The third layer lies vertically above the first and the spheres in third layer rest in one set of hollows on the top of the second layer. This arrangement is called ABAB ?. type and 74% of the available space is occupied by spheres. This arrangement is found in Be, Mg, Zn, Cd, Sc, Y, Ti, Zr, Tc, Ru.                                                (ii) Cubic close packing  : The third layer is different from the first and the spheres in the third layer lie on the other set of hollows marked ?C? in the first layer. This arrangement is called ABCABC?.. type and in this also 74% more...

Study of internal structure of crystal can be done with the help of X-rays. The distance of the constituent particles can be determined from diffraction value by Bragg’s equation.  \[n\lambda =2d\,\sin \theta \] where, l = Wave length of X-rays, n = order of reflection,                  \[\theta =\] Angle of reflection, d = Distance between two parallel surfaces The above equation is known as Bragg’s equation or Bragg’s law. The reflection corresponding to n = 1 (for a given family of planes) is called first order reflection; the reflection corresponding to n = 2 is the second order reflection and so on. Thus by measuring n (the order of reflection of the X-rays) and the incidence angle q, we can know d/l.     \[\frac{d}{\lambda }=\frac{n}{2\sin \theta }\] From this, d can be calculated if l is known and vice versa. In X-ray reflections, n is generally set as equal to 1. Thus Bragg’s equation may alternatively be written as \[\lambda =\,2\,d\,\sin \,\theta \]= 2 dhkl sinq Where dhkl denotes the perpendicular distance between adjacent planes with the indices hkl.


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Limiting radius ratio (r+)/(r?) C.N. Shape
< 0.155 2 Linear
0.155 ? 0.225 3 Planar triangle
0.225 ? 0.414 4 Tetrahedral